Исследование влияния обработки поверхности Si-подложек на морфологию слоев GaP, полученных методом плазмохимического атомно-слоевого осаждения

Investigations of atomic-layer deposition GaP layers on Si substrates with different orientations and preliminary surface treatment have been carried out. The was out by the method plasma enhanced using in situ argon plasma. It shown that at initial stage growth precisely oriented (100) misorientation, two-dimensional occurs both after chemical treatment. Upon (111) substrates, surface, a transition to three-dimensional is observed, which size islands reaches 30–40 nm. smallest root-mean-square roughness growing (<0.1 nm) achieved for misorientation 4 °. grown had ~ 0.1 nm, orientation - 0.12 found hydrogen leads slight increase (0.12–0.14 nm), associated effect inhomogeneous etching silicon When treating plasma, does not change significantly comparison On an epitaxial layer thickness morphology same as case